Weitere Produktangebote GS66508B-MR nach Preis ab 22.46 EUR bis 35.83 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
GS66508B-MR | Hersteller : Infineon Technologies Canada Inc. |
Description: GS66508B-MR Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 63mOhm @ 9A, 6V Vgs(th) (Max) @ Id: 2.6V @ 7mA Supplier Device Package: Die Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 242 pF @ 400 V |
auf Bestellung 250 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
|
|
GS66508B-MR | Hersteller : Infineon Technologies Canada Inc. |
Description: GS66508B-MR Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 63mOhm @ 9A, 6V Vgs(th) (Max) @ Id: 2.6V @ 7mA Supplier Device Package: Die Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 242 pF @ 400 V |
auf Bestellung 352 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
| GS66508B-MR | Hersteller : GaN Systems Inc | Bottom-Side Cooled 650V E-Mode GaN Transistor |
Produkt ist nicht verfügbar |
||||||||||
 |
GS66508B-MR | Hersteller : Infineon Technologies |
 GaN FETs 650V, 30A, GaN E-mode, GaNPX package, Bottom-side cooled |
Produkt ist nicht verfügbar |