GSFD06C20 Good-Ark Semiconductor
Hersteller: Good-Ark SemiconductorDescription: MOSFET N/P-CH 60V 19A TO252-4
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20.1W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc), 17A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 30V, 1810pF @ 30V
Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-4
Part Status: Active
auf Bestellung 4088 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.18 EUR |
| 14+ | 1.33 EUR |
| 25+ | 1.11 EUR |
| 100+ | 0.86 EUR |
| 250+ | 0.74 EUR |
| 500+ | 0.66 EUR |
| 1000+ | 0.60 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details GSFD06C20 Good-Ark Semiconductor
Description: MOSFET N/P-CH 60V 19A TO252-4, Packaging: Tape & Reel (TR), Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 20.1W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), 17A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 30V, 1810pF @ 30V, Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V, Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252-4, Part Status: Active.
Weitere Produktangebote GSFD06C20
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
|
GSFD06C20 | Hersteller : Good-Ark Semiconductor |
Description: MOSFET N/P-CH 60V 19A TO252-4 Packaging: Tape & Reel (TR) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 20.1W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 19A (Tc), 17A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 30V, 1810pF @ 30V Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252-4 Part Status: Active |
Produkt ist nicht verfügbar |