GSFD10110

GSFD10110 Good-Ark Semiconductor


GSFD10110.pdf Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 15.00A, 10
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 106mOhm @ 9A, 10V
Power Dissipation (Max): 34W (Ta)
Vgs(th) (Max) @ Id: 2.9V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 446 pF @ 50 V
auf Bestellung 2500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.22 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details GSFD10110 Good-Ark Semiconductor

Description: MOSFET, N-CH, SINGLE, 15.00A, 10, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), Rds On (Max) @ Id, Vgs: 106mOhm @ 9A, 10V, Power Dissipation (Max): 34W (Ta), Vgs(th) (Max) @ Id: 2.9V @ 250µA, Supplier Device Package: TO-252 (DPAK), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 446 pF @ 50 V.

Weitere Produktangebote GSFD10110 nach Preis ab 0.36 EUR bis 0.93 EUR

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GSFD10110 GSFD10110 Hersteller : Good-Ark Semiconductor GSFD10110.pdf Description: MOSFET, N-CH, SINGLE, 15.00A, 10
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 106mOhm @ 9A, 10V
Power Dissipation (Max): 34W (Ta)
Vgs(th) (Max) @ Id: 2.9V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 446 pF @ 50 V
auf Bestellung 486 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.93 EUR
31+0.57 EUR
100+0.36 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH