GSFD8005 Good-Ark Semiconductor
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 5.5A, 800V
Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15.16 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 132W (Tc)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Technische Details GSFD8005 Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 5.5A, 800V, Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 15.16 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-252 (DPAK), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 132W (Tc), Rds On (Max) @ Id, Vgs: 2.7Ohm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote GSFD8005 nach Preis ab 0.69 EUR bis 2.51 EUR
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GSFD8005 | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 5.5A, 800V Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 15.16 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 132W (Tc) Rds On (Max) @ Id, Vgs: 2.7Ohm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 2480 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFD8005 |
|
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 5.5A, 800V
Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15.16 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 132W (Tc)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET, N-CH, SINGLE, 5.5A, 800V
Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15.16 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 132W (Tc)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 2480 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.51 EUR |
| 14+ | 1.54 EUR |
| 25+ | 1.27 EUR |
| 100+ | 0.99 EUR |
| 250+ | 0.84 EUR |
| 500+ | 0.76 EUR |
| 1000+ | 0.69 EUR |