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GSFD8005

GSFD8005 Good-Ark Semiconductor

GSFD8005.pdf Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 5.5A, 800V
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 2.5A, 10V
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15.16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.51 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details GSFD8005 Good-Ark Semiconductor

Description: MOSFET, N-CH, SINGLE, 5.5A, 800V, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc), Rds On (Max) @ Id, Vgs: 2.7Ohm @ 2.5A, 10V, Power Dissipation (Max): 132W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252 (DPAK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 15.16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 25 V.

Weitere Produktangebote GSFD8005 nach Preis ab 0.58 EUR bis 2.11 EUR

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GSFD8005 GSFD8005 Hersteller : Good-Ark Semiconductor GSFD8005.pdf Description: MOSFET, N-CH, SINGLE, 5.5A, 800V
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 2.5A, 10V
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15.16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 25 V
auf Bestellung 2480 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.11 EUR
14+1.29 EUR
25+1.07 EUR
100+0.83 EUR
250+0.71 EUR
500+0.64 EUR
1000+0.58 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH