GSGH7R515 Good-Ark Semiconductor
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 175.00A, 1
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Power Dissipation (Max): 376W (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 175A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
| Anzahl | Preis |
|---|---|
| 3+ | 6.25 EUR |
| 50+ | 3.45 EUR |
| 100+ | 3.16 EUR |
| 500+ | 2.66 EUR |
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Technische Details GSGH7R515 Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 175.00A, 1, Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 3.9V @ 250µA, Power Dissipation (Max): 376W (Ta), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 175A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.