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GT011N03TLE

GT011N03TLE Goford Semiconductor

GT011N03TLE.pdf Hersteller: Goford Semiconductor
Description: MOSFET N-CH 30V 250A 300W 1.2m(
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 10A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TOLL-8L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6278 pF @ 15 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+1.17 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details GT011N03TLE Goford Semiconductor

Description: MOSFET N-CH 30V 250A 300W 1.2m(, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 250A (Tc), Rds On (Max) @ Id, Vgs: 1.2mOhm @ 10A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TOLL-8L, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±18V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6278 pF @ 15 V.

Weitere Produktangebote GT011N03TLE nach Preis ab 1.51 EUR bis 4.58 EUR

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GT011N03TLE GT011N03TLE Hersteller : Goford Semiconductor GT011N03TLE.pdf Description: MOSFET N-CH 30V 250A 300W 1.2M(
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Supplier Device Package: TOLL-8L
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6278 pF @ 15 V
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 10A, 10V
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.58 EUR
10+2.96 EUR
100+2.04 EUR
500+1.64 EUR
1000+1.51 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
GT011N03TLE GT011N03TLE Hersteller : Goford Semiconductor GT011N03TLE.pdf Description: MOSFET N-CH 30V 250A 300W 1.2M(
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Supplier Device Package: TOLL-8L
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6278 pF @ 15 V
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 10A, 10V
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Im Einkaufswagen  Stück im Wert von  UAH