GT013N04Q Goford Semiconductor
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 40V 195A 96W TO-247
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
| Anzahl | Preis |
|---|---|
| 4+ | 4.51 EUR |
| 10+ | 2.91 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details GT013N04Q Goford Semiconductor
Description: MOSFET N-CH 40V 195A 96W TO-247, Current - Continuous Drain (Id) @ 25°C: 195A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSMD, Flat Leads, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: 8-DFN (5x6), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 96W (Tc), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V.