GT013N04TI Goford Semiconductor
Hersteller: Goford SemiconductorDescription: MOSFET N-CH 40V 220A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3986 pF @ 20 V
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.2 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details GT013N04TI Goford Semiconductor
Description: MOSFET N-CH 40V 220A TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 220A (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V, Power Dissipation (Max): 90W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3986 pF @ 20 V.
Weitere Produktangebote GT013N04TI nach Preis ab 0.76 EUR bis 0.76 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
|---|---|---|---|---|---|---|---|---|---|
| GT013N04TI | Hersteller : GOFORD Semiconductor |
N-CH,40V,220A,RD(max) Less Than 2.5mOhm at 10V,VTH 2V to 5V, TO-220 |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
|