GT015N10TL Goford Semiconductor
Hersteller: Goford Semiconductor
Description: MOSFET,N-CH,100V,365A,395W,TOLL-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 365A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 395W
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 30 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 1.63 EUR |
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Technische Details GT015N10TL Goford Semiconductor
Description: MOSFET,N-CH,100V,365A,395W,TOLL-, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 365A (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V, Power Dissipation (Max): 395W, Supplier Device Package: TOLL, Drive Voltage (Max Rds On, Min Rds On): 10V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 30 V.
Weitere Produktangebote GT015N10TL nach Preis ab 1.29 EUR bis 1.29 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| GT015N10TL | Hersteller : GOFORD Semiconductor |
GT015N10TL |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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| GT015N10TL | Hersteller : GOFORD SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 365A; 395W; TOLL Type of transistor: N-MOSFET Technology: SGT Polarisation: unipolar Drain-source voltage: 100V Drain current: 365A Power dissipation: 395W Case: TOLL Gate-source voltage: ±20V Mounting: SMD Gate charge: 260nC Kind of channel: enhancement |
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