GT020N10TL Goford Semiconductor
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 300A 330W 2.0M(
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 50 V
Description: MOSFET N-CH 100V 300A 330W 2.0M(
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 50 V
auf Bestellung 1900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.1 EUR |
| 10+ | 3.31 EUR |
| 100+ | 2.3 EUR |
| 500+ | 1.86 EUR |
| 1000+ | 1.72 EUR |
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Technische Details GT020N10TL Goford Semiconductor
Description: MOSFET N-CH 100V 300A 330W 2.0M(, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 300A (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V, Power Dissipation (Max): 330W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 250µA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): 20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 50 V.
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GT020N10TL | Hersteller : Goford Semiconductor |
Description: MOSFET N-CH 100V 300A 330W 2.0M( Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Power Dissipation (Max): 330W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 50 V |
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