GT020N10TL Goford Semiconductor
Hersteller: Goford Semiconductor
Description: MOSFET,N-CH,100V,300A,330W,TOLL-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 330W
Supplier Device Package: TOLL-8L
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 50 V
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 1.67 EUR |
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
2000 Stücke
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Technische Details GT020N10TL Goford Semiconductor
Description: MOSFET,N-CH,100V,300A,330W,TOLL-, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 300A (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V, Power Dissipation (Max): 330W, Supplier Device Package: TOLL-8L, Drive Voltage (Max Rds On, Min Rds On): 10V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 50 V.
Weitere Produktangebote GT020N10TL
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| GT020N10TL | GOFORD SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 300A; 330W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 300A Power dissipation: 330W Case: TOLL Gate-source voltage: ±20V Mounting: SMD Gate charge: 160nC Kind of channel: enhancement Technology: SGT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| GT020N10TL |
|
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 300A; 330W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 300A
Power dissipation: 330W
Case: TOLL
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 160nC
Kind of channel: enhancement
Technology: SGT
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 300A; 330W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 300A
Power dissipation: 330W
Case: TOLL
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 160nC
Kind of channel: enhancement
Technology: SGT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH