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GT023N10Q

GT023N10Q Goford Semiconductor

GT023N10Q.pdf
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 226A 250W TO-2
Input Capacitance (Ciss) (Max) @ Vds: 8488 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 226A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.5 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details GT023N10Q Goford Semiconductor

Description: MOSFET N-CH 100V 226A 250W TO-2, Input Capacitance (Ciss) (Max) @ Vds: 8488 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-247, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 250W (Tc), Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V, Current - Continuous Drain (Id) @ 25°C: 226A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.

Weitere Produktangebote GT023N10Q nach Preis ab 2.18 EUR bis 2.37 EUR

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GT023N10Q Hersteller : Goford Semiconductor GT023N10Q.pdf Description: MOSFET N-CH 100V 226A 250W TO-2
Input Capacitance (Ciss) (Max) @ Vds: 8488 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 226A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1200+2.37 EUR
12000+2.18 EUR
Mindestbestellmenge: 1200
Im Einkaufswagen  Stück im Wert von  UAH