GT023N10Q Goford Semiconductor
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 226A 250W TO-2
Input Capacitance (Ciss) (Max) @ Vds: 8488 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 226A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Technische Details GT023N10Q Goford Semiconductor
Description: MOSFET N-CH 100V 226A 250W TO-2, Input Capacitance (Ciss) (Max) @ Vds: 8488 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-247, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 250W (Tc), Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V, Current - Continuous Drain (Id) @ 25°C: 226A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote GT023N10Q nach Preis ab 2.59 EUR bis 2.82 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
|---|---|---|---|---|---|---|---|---|---|
| GT023N10Q | Goford Semiconductor |
Description: MOSFET N-CH 100V 226A 250W TO-2 Input Capacitance (Ciss) (Max) @ Vds: 8488 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-247 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 226A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| GT023N10Q |
|
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 226A 250W TO-2
Input Capacitance (Ciss) (Max) @ Vds: 8488 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 226A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 100V 226A 250W TO-2
Input Capacitance (Ciss) (Max) @ Vds: 8488 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 226A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1200+ | 2.82 EUR |
| 12000+ | 2.59 EUR |