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GT023N10TL

GT023N10TL Goford Semiconductor

GT023N10TL.pdf Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 330A TOLL-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 10V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8058 pF @ 50 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+2.31 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details GT023N10TL Goford Semiconductor

Description: MOSFET N-CH 100V 330A TOLL-8, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Current - Continuous Drain (Id) @ 25°C: 330A (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 10V, Vgs(th) (Max) @ Id: 3.8V @ 250µA, Supplier Device Package: TOLL-8L, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8058 pF @ 50 V, Package / Case: 8-PowerSFN, FET Type: N-Channel, Power Dissipation (Max): 395W (Tc), Drain to Source Voltage (Vdss): 100 V.

Weitere Produktangebote GT023N10TL nach Preis ab 2.08 EUR bis 6.3 EUR

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GT023N10TL GT023N10TL Hersteller : Goford Semiconductor GT023N10TL.pdf Description: MOSFET N-CH 100V 330A TOLL-8
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 330A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TOLL-8L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8058 pF @ 50 V
Package / Case: 8-PowerSFN
FET Type: N-Channel
Power Dissipation (Max): 395W (Tc)
Drain to Source Voltage (Vdss): 100 V
auf Bestellung 1770 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.3 EUR
10+4.36 EUR
100+3.2 EUR
500+2.69 EUR
1000+2.67 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
GT023N10TL Hersteller : GOFORD Semiconductor GT023N10TL.pdf GT023N10TL
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2000+2.08 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
GT023N10TL GT023N10TL Hersteller : Goford Semiconductor GT023N10TL.pdf Description: MOSFET N-CH 100V 330A TOLL-8
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 330A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TOLL-8L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8058 pF @ 50 V
Package / Case: 8-PowerSFN
FET Type: N-Channel
Power Dissipation (Max): 395W (Tc)
Drain to Source Voltage (Vdss): 100 V
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Im Einkaufswagen  Stück im Wert von  UAH