GT025N06AD5 Goford Semiconductor
Hersteller: Goford Semiconductor
Description: N60V, 170A, RD<2.2M@10V,VTH1.2V~
Packaging: Cut Tape (CT)
Part Status: Active
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5044 pF @ 30 V
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.96 EUR |
| 10+ | 3.2 EUR |
| 100+ | 2.19 EUR |
| 500+ | 1.76 EUR |
| 1000+ | 1.64 EUR |
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Technische Details GT025N06AD5 Goford Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SGT; unipolar; 60V; 170A; 215W; DFN5x6-8, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 170A, Power dissipation: 215W, Case: DFN5x6-8, Gate-source voltage: ±20V, Mounting: SMD, Gate charge: 102nC, Kind of channel: enhancement, Technology: SGT.
Weitere Produktangebote GT025N06AD5
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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GT025N06AD5 | Goford Semiconductor |
Description: N60V, 170A, RD<2.2M@10V,VTH1.2V~ Packaging: Tape & Reel (TR) Part Status: Active Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Power Dissipation (Max): 215W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5044 pF @ 30 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| GT025N06AD5 | GOFORD SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 60V; 170A; 215W; DFN5x6-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 170A Power dissipation: 215W Case: DFN5x6-8 Gate-source voltage: ±20V Mounting: SMD Gate charge: 102nC Kind of channel: enhancement Technology: SGT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| GT025N06AD5 |
|
Hersteller: Goford Semiconductor
Description: N60V, 170A, RD<2.2M@10V,VTH1.2V~
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5044 pF @ 30 V
Description: N60V, 170A, RD<2.2M@10V,VTH1.2V~
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5044 pF @ 30 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| GT025N06AD5 |
|
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SGT; unipolar; 60V; 170A; 215W; DFN5x6-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 170A
Power dissipation: 215W
Case: DFN5x6-8
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 102nC
Kind of channel: enhancement
Technology: SGT
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SGT; unipolar; 60V; 170A; 215W; DFN5x6-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 170A
Power dissipation: 215W
Case: DFN5x6-8
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 102nC
Kind of channel: enhancement
Technology: SGT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH