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GT025N06AD5

GT025N06AD5 Goford Semiconductor

GT025N06AD5.pdf Hersteller: Goford Semiconductor
Description: MOSFET N-CH 60V 170A DFN5*6-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5044 pF @ 30 V
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.11 EUR
15000+1.03 EUR
30000+0.92 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details GT025N06AD5 Goford Semiconductor

Description: MOSFET N-CH 60V 170A DFN5*6-8L, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 170A (Tc), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V, Power Dissipation (Max): 104W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-DFN (4.9x5.75), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Input Capacitance (Ciss) (Max) @ Vds: 5044 pF @ 30 V.

Weitere Produktangebote GT025N06AD5 nach Preis ab 0.76 EUR bis 4.33 EUR

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GT025N06AD5 GT025N06AD5 Hersteller : Goford Semiconductor GT025N06AD5.pdf Description: N60V, 170A, RD<2.2M@10V,VTH1.2V~
Packaging: Cut Tape (CT)
Part Status: Active
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5044 pF @ 30 V
auf Bestellung 4131 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.33 EUR
10+2.79 EUR
100+1.91 EUR
500+1.53 EUR
1000+1.41 EUR
2000+1.31 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
GT025N06AD5 Hersteller : GOFORD Semiconductor GT025N06AD5.pdf N-CH,60V,170A,RD(max) Less Than 2mOhm at 10V,RD(max) Less Than 2.5mOhm at 4.5V,VTH 1.2V to 2.5V,DFN5x6-8L
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.98 EUR
15000+0.88 EUR
30000+0.76 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
GT025N06AD5 GT025N06AD5 Hersteller : Goford Semiconductor GT025N06AD5.pdf Description: N60V, 170A, RD<2.2M@10V,VTH1.2V~
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5044 pF @ 30 V
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Im Einkaufswagen  Stück im Wert von  UAH