GT025N06AM Goford Semiconductor
Hersteller: Goford Semiconductor
Description: N60V,170A,RD<2.5M@10V,VTH1.2V~2.
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5119 pF @ 30 V
| Anzahl | Preis |
|---|---|
| 4+ | 4.77 EUR |
| 10+ | 3.09 EUR |
| 100+ | 2.14 EUR |
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Technische Details GT025N06AM Goford Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SGT; unipolar; 60V; 170A; 215W; TO263, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 170A, Power dissipation: 215W, Case: TO263, Gate-source voltage: ±20V, Mounting: SMD, Gate charge: 70nC, Kind of channel: enhancement, Technology: SGT.
Weitere Produktangebote GT025N06AM nach Preis ab 1.14 EUR bis 1.14 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| GT025N06AM | Hersteller : GOFORD Semiconductor |
N-CH,60V,170A,RD(max) Less Than 2.5mOhm at 10V,RD(max) Less Than 3.0mOhm at 4.5V,VTH 1.2V to 2.5V, TO-263 |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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GT025N06AM | Hersteller : Goford Semiconductor |
Description: N60V,170A,RD<2.5M@10V,VTH1.2V~2. Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V Power Dissipation (Max): 215W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5119 pF @ 30 V |
Produkt ist nicht verfügbar |
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| GT025N06AM | Hersteller : GOFORD SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 60V; 170A; 215W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 170A Power dissipation: 215W Case: TO263 Gate-source voltage: ±20V Mounting: SMD Gate charge: 70nC Kind of channel: enhancement Technology: SGT |
Produkt ist nicht verfügbar |