GT025N06AQ Goford Semiconductor
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 60V 175A 220W 2.5M(M
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 30 V
Produktrezensionen
Produktbewertung abgeben
Technische Details GT025N06AQ Goford Semiconductor
Description: MOSFET N-CH 60V 175A 220W 2.5M(M, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 175A (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V, Power Dissipation (Max): 220W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 30 V.
Weitere Produktangebote GT025N06AQ
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| GT025N06AQ | Hersteller : GOFORD SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 60V; 175A; 220W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 175A Power dissipation: 220W Case: TO247 Gate-source voltage: ±20V Mounting: THT Gate charge: 70nC Kind of channel: enhancement Technology: SGT |
Produkt ist nicht verfügbar |