GT040N04T Goford Semiconductor
Hersteller: Goford SemiconductorDescription: MOSFET,N-CH,40V,110A,87W,TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 87W
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V, 4.5V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 15 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 0.58 EUR |
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Technische Details GT040N04T Goford Semiconductor
Description: MOSFET,N-CH,40V,110A,87W,TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V, Power Dissipation (Max): 87W, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 10V, 4.5V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 15 V.
Weitere Produktangebote GT040N04T nach Preis ab 1.9 EUR bis 2.99 EUR
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GT040N04T | Hersteller : Goford Semiconductor |
Description: MOSFET N-CH 40V 120A 96W 4M(MAX)Packaging: Tube Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2794 pF @ 20 V |
auf Bestellung 38 Stücke: Lieferzeit 10-14 Tag (e) |
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