GT045N10D5 Goford Semiconductor
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 120A DFN5*6-8L
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4217 pF @ 50 V
| Anzahl | Privatkunde |
|---|---|
| 5+ | 5.18 EUR |
| 10+ | 3.34 EUR |
| 100+ | 2.3 EUR |
| 500+ | 1.84 EUR |
| 1000+ | 1.73 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details GT045N10D5 Goford Semiconductor
Description: MOSFET N-CH 100V 120A DFN5*6-8L, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V, Power Dissipation (Max): 180W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-DFN (4.9x5.75), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4217 pF @ 50 V.
Weitere Produktangebote GT045N10D5
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
|
GT045N10D5 | Goford Semiconductor |
Description: MOSFET N-CH 100V 120A DFN5*6-8L Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4217 pF @ 50 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| GT045N10D5 | GOFORD SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 120A; 180W; DFN5x6-8 Type of transistor: N-MOSFET Technology: SGT Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 180W Case: DFN5x6-8 Gate-source voltage: ±20V Mounting: SMD Kind of channel: enhancement Gate charge: 78nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| GT045N10D5 |
|
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 120A DFN5*6-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4217 pF @ 50 V
Description: MOSFET N-CH 100V 120A DFN5*6-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4217 pF @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| GT045N10D5 |
|
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 120A; 180W; DFN5x6-8
Type of transistor: N-MOSFET
Technology: SGT
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 180W
Case: DFN5x6-8
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Gate charge: 78nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 120A; 180W; DFN5x6-8
Type of transistor: N-MOSFET
Technology: SGT
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 180W
Case: DFN5x6-8
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Gate charge: 78nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH