GT045N10M Goford Semiconductor
Hersteller: Goford SemiconductorDescription: N100V, 120A,RD<4.5M@10V,VTH2V~4V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4198 pF @ 50 V
auf Bestellung 268 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.52 EUR |
| 10+ | 2.94 EUR |
| 100+ | 2.04 EUR |
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Technische Details GT045N10M Goford Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 120A; 180W; TO263, Type of transistor: N-MOSFET, Technology: SGT, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 120A, Power dissipation: 180W, Case: TO263, Gate-source voltage: ±20V, Mounting: SMD, Kind of channel: enhancement, Gate charge: 81nC.
Weitere Produktangebote GT045N10M
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GT045N10M | Hersteller : Goford Semiconductor |
Description: N100V, 120A,RD<4.5M@10V,VTH2V~4V Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4198 pF @ 50 V |
Produkt ist nicht verfügbar |
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| GT045N10M | Hersteller : GOFORD SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 120A; 180W; TO263 Type of transistor: N-MOSFET Technology: SGT Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 180W Case: TO263 Gate-source voltage: ±20V Mounting: SMD Kind of channel: enhancement Gate charge: 81nC |
Produkt ist nicht verfügbar |