GT045N10Q Goford Semiconductor
Hersteller: Goford Semiconductor
Description: MOSFET,N-CH,100V,145A,208W,TO-24
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Power Dissipation (Max): 208W
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V, 4.5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 50 V
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Technische Details GT045N10Q Goford Semiconductor
Description: MOSFET,N-CH,100V,145A,208W,TO-24, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 145A (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V, Power Dissipation (Max): 208W, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 10V, 4.5V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 50 V.
Weitere Produktangebote GT045N10Q nach Preis ab 4.5 EUR bis 6.89 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
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GT045N10Q | Goford Semiconductor |
Description: MOSFET N-CH 100V 145A 208W TO-24 |
auf Bestellung 48 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT045N10Q |
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Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 145A 208W TO-24
Description: MOSFET N-CH 100V 145A 208W TO-24
auf Bestellung 48 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.89 EUR |
| 10+ | 4.5 EUR |