GT060N04D5 Goford Semiconductor

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Hersteller: Goford Semiconductor
Description: N40V,120A,RD<2.8M@10V,VTH1.0V~2.
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1276 pF @ 20 V

auf Bestellung 4970 Stücke:

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Lieferzeit 10-14 Tag (e)

Anzahl	Preis ohne MwSt
18+	1 EUR
21+	0.87 EUR
100+	0.6 EUR
500+	0.5 EUR
1000+	0.43 EUR
2000+	0.38 EUR

Mindestbestellmenge: 18

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Technische Details GT060N04D5 Goford Semiconductor

Weitere Produktangebote GT060N04D5

Foto	Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit entfalten einschränken alle	Preis ohne MwSt
	GT060N04D5	Hersteller : Goford Semiconductor	Description: N40V,120A,RD<2.8M@10V,VTH1.0V~2. Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1276 pF @ 20 V	Produkt ist nicht verfügbar	kaufen