GT060N04D5 Goford Semiconductor
Hersteller: Goford Semiconductor
Description: N40V,120A,RD<2.8M@10V,VTH1.0V~2.
Power Dissipation (Max): 39W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1276 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFN (4.9x5.75)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
| Anzahl | Preis |
|---|---|
| 12+ | 1.55 EUR |
| 19+ | 0.97 EUR |
| 100+ | 0.63 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.44 EUR |
| 2000+ | 0.4 EUR |
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Technische Details GT060N04D5 Goford Semiconductor
Description: N40V,120A,RD.
Weitere Produktangebote GT060N04D5
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GT060N04D5 | Hersteller : Goford Semiconductor |
Description: N40V,120A,RD<2.8M@10V,VTH1.0V~2. Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1276 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-DFN (4.9x5.75) Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 39W (Tc) |
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