GT060N04K Goford Semiconductor
Hersteller: Goford Semiconductor
Description: MOSFET, N-CH, 40V,54A,TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 20 V
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.26 EUR |
| 15+ | 1.4 EUR |
| 100+ | 0.93 EUR |
| 500+ | 0.71 EUR |
| 1000+ | 0.65 EUR |
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Technische Details GT060N04K Goford Semiconductor
Description: MOSFET, N-CH, 40V,54A,TO-252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 62A (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V, Power Dissipation (Max): 70W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: TO-252, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 20 V.
Weitere Produktangebote GT060N04K
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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GT060N04K | Goford Semiconductor |
Description: MOSFET, N-CH, 40V,54A,TO-252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 20 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| GT060N04K | GOFORD SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 40V; 62A; 70W; TO252 Type of transistor: N-MOSFET Technology: SGT Polarisation: unipolar Drain-source voltage: 40V Drain current: 62A Power dissipation: 70W Case: TO252 Gate-source voltage: ±20V Mounting: SMD Gate charge: 25nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| GT060N04K |
|
Hersteller: Goford Semiconductor
Description: MOSFET, N-CH, 40V,54A,TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 20 V
Description: MOSFET, N-CH, 40V,54A,TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 20 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| GT060N04K |
|
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SGT; unipolar; 40V; 62A; 70W; TO252
Type of transistor: N-MOSFET
Technology: SGT
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 62A
Power dissipation: 70W
Case: TO252
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SGT; unipolar; 40V; 62A; 70W; TO252
Type of transistor: N-MOSFET
Technology: SGT
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 62A
Power dissipation: 70W
Case: TO252
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH