GT060N04T Goford Semiconductor
Hersteller: Goford Semiconductor
Description: MOSFET, N-CH, 40V,60A,TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 20 V
| Anzahl | Preis |
|---|---|
| 9+ | 2.15 EUR |
| 50+ | 1.01 EUR |
| 100+ | 0.9 EUR |
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Technische Details GT060N04T Goford Semiconductor
Description: MOSFET, N-CH, 40V,60A,TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 62A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V, Power Dissipation (Max): 70W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 20 V.
Weitere Produktangebote GT060N04T
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| GT060N04T | Hersteller : GOFORD SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 40V; 62A; 70W; TO220 Type of transistor: N-MOSFET Technology: SGT Polarisation: unipolar Drain-source voltage: 40V Drain current: 62A Power dissipation: 70W Case: TO220 Gate-source voltage: ±20V Mounting: THT Gate charge: 25nC Kind of channel: enhancement |
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