 
GT065P06T Goford Semiconductor
 Hersteller: Goford Semiconductor
                                                Hersteller: Goford SemiconductorDescription: MOSFET P-CH 60V 82A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis | 
|---|---|
| 2000+ | 1.1 EUR | 
| 8000+ | 1.05 EUR | 
| 16000+ | 1.01 EUR | 
| 30000+ | 0.91 EUR | 
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Technische Details GT065P06T Goford Semiconductor
Description: MOSFET P-CH 60V 82A TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 82A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V. 
Weitere Produktangebote GT065P06T nach Preis ab 0.91 EUR bis 3.82 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||
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|   | GT065P06T | Hersteller : Goford Semiconductor |  Description: P-60V,-82A,RD(MAX)<7.5M@-10V,VTH Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5335 pF @ 30 V | auf Bestellung 27 Stücke:Lieferzeit 10-14 Tag (e) | 
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| GT065P06T | Hersteller : GOFORD Semiconductor |  P-CH,-60V,-82A,RD(max) Less Than 7.5mOhm at -10V,RD(max) Less Than 9.5mOhm at -4.5V,VTH-1V to -2.5V ,TO-220 | auf Bestellung 16450 Stücke:Lieferzeit 14-21 Tag (e) | 
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