GT1003A

GT1003A Goford Semiconductor


GT1003A.pdf Hersteller: Goford Semiconductor
Description: N100V, 3A,RD<140M@10V,VTH1.0V~3.
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 50 V
auf Bestellung 1947 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
40+0.45 EUR
100+0.28 EUR
500+0.21 EUR
1000+0.19 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details GT1003A Goford Semiconductor

Description: MOSFET N-CH 100V 3A SOT-23-3L, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 3A, 10V, Power Dissipation (Max): 1.6W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V.

Weitere Produktangebote GT1003A nach Preis ab 0.064 EUR bis 0.084 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
GT1003A Hersteller : GOFORD Semiconductor GT1003A.pdf High Density Cell Design MOSFET
auf Bestellung 90000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.084 EUR
15000+0.075 EUR
30000+0.064 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
GT1003A GT1003A Hersteller : Goford Semiconductor GT1003A.pdf Description: N100V, 3A,RD<140M@10V,VTH1.0V~3.
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GT1003A GT1003A Hersteller : Goford Semiconductor GT1003A.pdf Description: MOSFET N-CH 100V 3A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 3A, 10V
Power Dissipation (Max): 1.6W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH