GT1003A Goford Semiconductor
Hersteller: Goford Semiconductor
Description: N100V, 3A,RD<140M@10V,VTH1.0V~3.
Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.7W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
| Anzahl | Privatkunde |
|---|---|
| 24+ | 0.88 EUR |
| 40+ | 0.54 EUR |
| 100+ | 0.33 EUR |
| 500+ | 0.25 EUR |
| 1000+ | 0.23 EUR |
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Technische Details GT1003A Goford Semiconductor
Description: MOSFET N-CH 100V 3A SOT-23-3L, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1.6W (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 3A, 10V, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote GT1003A nach Preis ab 0.081 EUR bis 0.1 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| GT1003A | GOFORD Semiconductor |
High Density Cell Design MOSFET |
auf Bestellung 90000 Stücke: Lieferzeit 14-21 Tag (e) |
|
| GT1003A |
|
Hersteller: GOFORD Semiconductor
High Density Cell Design MOSFET
High Density Cell Design MOSFET
auf Bestellung 90000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.1 EUR |
| 15000+ | 0.094 EUR |
| 30000+ | 0.081 EUR |