GT1003D Goford Semiconductor
Hersteller: Goford SemiconductorDescription: N100V,RD(MAX)<130M@10V,RD(MAX)<1
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 212 pF @ 50 V
auf Bestellung 4370 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 28+ | 0.63 EUR |
| 45+ | 0.39 EUR |
| 100+ | 0.25 EUR |
| 500+ | 0.18 EUR |
| 1000+ | 0.16 EUR |
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Technische Details GT1003D Goford Semiconductor
Description: MOSFET N-CH 100V 3A SOT-23-3L, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V, Power Dissipation (Max): 2W (Tc), Vgs(th) (Max) @ Id: 2.6V @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V.
Weitere Produktangebote GT1003D nach Preis ab 0.058 EUR bis 0.074 EUR
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| GT1003D | Hersteller : GOFORD Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
auf Bestellung 45000 Stücke: Lieferzeit 14-21 Tag (e) |
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GT1003D | Hersteller : Goford Semiconductor |
Description: N100V,RD(MAX)<130M@10V,RD(MAX)<1 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V Power Dissipation (Max): 2W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 212 pF @ 50 V |
Produkt ist nicht verfügbar |
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GT1003D | Hersteller : Goford Semiconductor |
Description: MOSFET N-CH 100V 3A SOT-23-3L Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V Power Dissipation (Max): 2W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V |
Produkt ist nicht verfügbar |