GT1003D GOFORD Semiconductor
auf Bestellung 45000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.075 EUR |
| 15000+ | 0.067 EUR |
| 30000+ | 0.058 EUR |
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Technische Details GT1003D GOFORD Semiconductor
Description: MOSFET N-CH 100V 3A SOT-23-3L, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A, Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V, Power Dissipation (Max): 2W, Vgs(th) (Max) @ Id: 2.6V @ 250µA, Supplier Device Package: SOT-23-3L, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 212 pF @ 50 V.
Weitere Produktangebote GT1003D nach Preis ab 0.062 EUR bis 0.08 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| GT1003D | Hersteller : GOFORD Semiconductor | N-Channel Enhancement Mode Power MOSFET |
auf Bestellung 45000 Stücke: Lieferzeit 14-21 Tag (e) |
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| GT1003D | Hersteller : Goford Semiconductor |
Description: MOSFET N-CH 100V 3A SOT-23-3L Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V Power Dissipation (Max): 2W Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: SOT-23-3L Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 212 pF @ 50 V |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |