GT1003D Goford Semiconductor
Hersteller: Goford Semiconductor
Description: N100V,RD(MAX)<130M@10V,RD(MAX)<1
Input Capacitance (Ciss) (Max) @ Vds: 212 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
| Anzahl | Preis |
|---|---|
| 28+ | 0.63 EUR |
| 45+ | 0.39 EUR |
| 100+ | 0.25 EUR |
| 500+ | 0.18 EUR |
| 1000+ | 0.16 EUR |
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Technische Details GT1003D Goford Semiconductor
Description: MOSFET N-CH 100V 3A SOT-23-3L, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 2.6V @ 250µA, Power Dissipation (Max): 2W (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V, Current - Continuous Drain (Id) @ 25°C: 3A (Tc).
Weitere Produktangebote GT1003D
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GT1003D | Hersteller : Goford Semiconductor |
Description: N100V,RD(MAX)<130M@10V,RD(MAX)<1 Vgs(th) (Max) @ Id: 2.6V @ 250µA Power Dissipation (Max): 2W (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 212 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23-3 |
Produkt ist nicht verfügbar |
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GT1003D | Hersteller : Goford Semiconductor |
Description: MOSFET N-CH 100V 3A SOT-23-3L Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 2.6V @ 250µA Power Dissipation (Max): 2W (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) |
Produkt ist nicht verfügbar |