GT100N04D3 Goford Semiconductor
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 40V 13A DFN3*3-8L
Power Dissipation (Max): 23W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (3.15x3.05)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
| Anzahl | Preis |
|---|---|
| 5000+ | 0.18 EUR |
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Technische Details GT100N04D3 Goford Semiconductor
Description: MOSFET N-CH 40V 13A DFN3*3-8L, Power Dissipation (Max): 23W (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-DFN (3.15x3.05), Vgs(th) (Max) @ Id: 2.5V @ 250µA.
Weitere Produktangebote GT100N04D3 nach Preis ab 0.22 EUR bis 1.02 EUR
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GT100N04D3 | Hersteller : Goford Semiconductor |
Description: N40V, 13A,RD<10M@10V,VTH1.0V~2.5 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 5A, 10V Power Dissipation (Max): 23W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (3.15x3.05) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 20 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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GT100N04D3 | Hersteller : Goford Semiconductor |
Description: N40V, 13A,RD<10M@10V,VTH1.0V~2.5 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 5A, 10V Power Dissipation (Max): 23W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (3.15x3.05) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 20 V |
auf Bestellung 1760 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT100N04D3 | Hersteller : GOFORD SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 40V; 35A; 25W; DFN3x3-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 35A Power dissipation: 25W Case: DFN3x3-8 Gate-source voltage: ±20V Mounting: SMD Gate charge: 13nC Kind of channel: enhancement Technology: SGT |
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