GT100N04D3 Goford Semiconductor
Hersteller: Goford SemiconductorDescription: N40V, 13A,RD<10M@10V,VTH1.0V~2.5
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 5A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 20 V
auf Bestellung 4959 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 25+ | 0.72 EUR |
| 29+ | 0.62 EUR |
| 100+ | 0.47 EUR |
| 500+ | 0.37 EUR |
| 1000+ | 0.28 EUR |
| 2000+ | 0.26 EUR |
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Technische Details GT100N04D3 Goford Semiconductor
N-CH,40V,13A,RD(max) Less Than 10mOhm at 10V,RD(max) Less Than 16mOhm at 4.5V,VTH 1.0V to 2.5V,DFN3x3-8L.
Weitere Produktangebote GT100N04D3 nach Preis ab 0.18 EUR bis 0.18 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| GT100N04D3 | Hersteller : GOFORD Semiconductor |
N-CH,40V,13A,RD(max) Less Than 10mOhm at 10V,RD(max) Less Than 16mOhm at 4.5V,VTH 1.0V to 2.5V,DFN3x3-8L |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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GT100N04D3 | Hersteller : Goford Semiconductor |
Description: N40V, 13A,RD<10M@10V,VTH1.0V~2.5 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 5A, 10V Power Dissipation (Max): 23W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (3.15x3.05) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 20 V |
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