GT100N04K Goford Semiconductor
Hersteller: Goford Semiconductor
Description: N40V,50A,RD<10M@10V,VTH1.2V~2.2V
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V, 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 644 pF @ 20 V
| Anzahl | Preis |
|---|---|
| 17+ | 1.09 EUR |
| 27+ | 0.67 EUR |
| 100+ | 0.43 EUR |
| 500+ | 0.33 EUR |
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Technische Details GT100N04K Goford Semiconductor
Description: N40V,50A,RD.
Weitere Produktangebote GT100N04K
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GT100N04K | Hersteller : Goford Semiconductor |
Description: N40V,50A,RD<10M@10V,VTH1.2V~2.2V Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 5A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 10V, 4.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 644 pF @ 20 V |
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