GT100N12K Goford Semiconductor
Hersteller: Goford Semiconductor
Description: N120V,65A,RD<12M@10V,VTH2.5V~3.5
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 35A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2911 pF @ 60 V
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.86 EUR |
| 10+ | 2.46 EUR |
| 100+ | 1.68 EUR |
| 500+ | 1.33 EUR |
| 1000+ | 1.27 EUR |
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Technische Details GT100N12K Goford Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SGT; unipolar; 120V; 70A; 100W; TO252, Case: TO252, Power dissipation: 100W, Gate charge: 45nC, Polarisation: unipolar, Technology: SGT, Drain current: 70A, Kind of channel: enhancement, Drain-source voltage: 120V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Mounting: SMD.
Weitere Produktangebote GT100N12K nach Preis ab 0.87 EUR bis 0.87 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
| GT100N12K | GOFORD Semiconductor |
GT100N12K |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| GT100N12K |
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Hersteller: GOFORD Semiconductor
GT100N12K
GT100N12K
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.87 EUR |