GT100N12M Goford Semiconductor
Hersteller: Goford Semiconductor
Description: N120V,RD(MAX)<10M@10V,VTH2.5V~3.
Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.88 EUR |
| 10+ | 3.13 EUR |
| 100+ | 2.14 EUR |
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Technische Details GT100N12M Goford Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SGT; unipolar; 120V; 70A; 100W; TO263, Case: TO263, Power dissipation: 100W, Gate charge: 45nC, Polarisation: unipolar, Technology: SGT, Drain current: 70A, Kind of channel: enhancement, Drain-source voltage: 120V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Mounting: SMD.
Weitere Produktangebote GT100N12M nach Preis ab 1.07 EUR bis 1.07 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
| GT100N12M | GOFORD Semiconductor |
N-CH,120V,70A,RD(max) Less Than 10mOhm at 10V, VTH2.5V to 3.5V, TO-263 |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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| GT100N12M |
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Hersteller: GOFORD Semiconductor
N-CH,120V,70A,RD(max) Less Than 10mOhm at 10V, VTH2.5V to 3.5V, TO-263
N-CH,120V,70A,RD(max) Less Than 10mOhm at 10V, VTH2.5V to 3.5V, TO-263
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 1.07 EUR |