GT100N12M Goford Semiconductor
Hersteller: Goford SemiconductorDescription: N120V,RD(MAX)<10M@10V,VTH2.5V~3.
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 35A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 60 V
auf Bestellung 708 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 2.66 EUR |
| 10+ | 2.21 EUR |
| 100+ | 1.76 EUR |
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Technische Details GT100N12M Goford Semiconductor
N-CH,120V,70A,RD(max) Less Than 10mOhm at 10V, VTH2.5V to 3.5V, TO-263.
Weitere Produktangebote GT100N12M nach Preis ab 0.95 EUR bis 0.95 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| GT100N12M | Hersteller : GOFORD Semiconductor |
N-CH,120V,70A,RD(max) Less Than 10mOhm at 10V, VTH2.5V to 3.5V, TO-263 |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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GT100N12M | Hersteller : Goford Semiconductor |
Description: N120V,RD(MAX)<10M@10V,VTH2.5V~3. Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 35A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 60 V |
Produkt ist nicht verfügbar |