GT105N10K Goford Semiconductor
Hersteller: Goford Semiconductor
Description: MOSFET, N-CH, 100V,60A,TO-252
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1574 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.67 EUR |
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Technische Details GT105N10K Goford Semiconductor
Description: MOSFET, N-CH, 100V,60A,TO-252, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-252, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 83W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1574 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Rds On (Max) @ Id, Vgs: 10.5mOhm @ 35A, 10V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote GT105N10K nach Preis ab 1.69 EUR bis 2.68 EUR
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GT105N10K | Hersteller : Goford Semiconductor |
Description: MOSFET, N-CH, 100V,60A,TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1574 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 35A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) |
auf Bestellung 83 Stücke: Lieferzeit 10-14 Tag (e) |
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GT105N10K | Hersteller : Goford Semiconductor |
Description: MOSFET N-CH 100V 60A TO-252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 35A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V |
Produkt ist nicht verfügbar |