GT10N10 Goford Semiconductor
Hersteller: Goford Semiconductor
Description: N100V, 7A,RD<140M@10V,VTH1.5V~2.
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 205 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 23W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.5A, 10V
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Technische Details GT10N10 Goford Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 9A; 23W; TO252, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 9A, Power dissipation: 23W, Case: TO252, Gate-source voltage: ±20V, Mounting: SMD, Gate charge: 5nC, Kind of channel: enhancement, Technology: SGT.
Weitere Produktangebote GT10N10 nach Preis ab 0.18 EUR bis 0.23 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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| GT10N10 | GOFORD Semiconductor |
N-CH 100V 7A 140mOhm/MAX at 10V, 175mOhm/MAX at 4.5V ,TO-252 |
auf Bestellung 100000 Stücke: Lieferzeit 14-21 Tag (e) |
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| GT10N10 |
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Hersteller: GOFORD Semiconductor
N-CH 100V 7A 140mOhm/MAX at 10V, 175mOhm/MAX at 4.5V ,TO-252
N-CH 100V 7A 140mOhm/MAX at 10V, 175mOhm/MAX at 4.5V ,TO-252
auf Bestellung 100000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.23 EUR |
| 15000+ | 0.2 EUR |
| 30000+ | 0.18 EUR |