GT110N06S Goford Semiconductor
Hersteller: Goford SemiconductorDescription: MOSFET N-CH 60V 14A SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 14A, 10V
FET Feature: Standard
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4000+ | 0.35 EUR |
| 16000+ | 0.32 EUR |
| 32000+ | 0.29 EUR |
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Technische Details GT110N06S Goford Semiconductor
Description: MOSFET N-CH 60V 14A SOP-8, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 14A, 10V, FET Feature: Standard, Power Dissipation (Max): 3W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: 8-SOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V.
Weitere Produktangebote GT110N06S nach Preis ab 0.28 EUR bis 0.31 EUR
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| GT110N06S | Hersteller : GOFORD Semiconductor |
N-CH 60V 14A 11mOhmMAX at 10V, 14mOhmMAX at 4.5V, SOP-8 |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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