GT15J341,S4X Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: PB-F DISCRETE IGBT TRANSISTOR TO
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-220SIS
Td (on/off) @ 25°C: 60ns/170ns
Switching Energy: 300µJ (on), 300µJ (off)
Test Condition: 300V, 15A, 33Ohm, 15V
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 30 W
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 2.97 EUR |
| 10+ | 2.46 EUR |
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Technische Details GT15J341,S4X Toshiba Semiconductor and Storage
Description: PB-F DISCRETE IGBT TRANSISTOR TO, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 80 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A, Supplier Device Package: TO-220SIS, Td (on/off) @ 25°C: 60ns/170ns, Switching Energy: 300µJ (on), 300µJ (off), Test Condition: 300V, 15A, 33Ohm, 15V, Part Status: Active, Current - Collector (Ic) (Max): 15 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 30 W.
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