Produkte > GOFORD SEMICONDUCTOR > GT1K2N10I

GT1K2N10I GOFORD SEMICONDUCTOR

Name: GT1K2N10I
Brand: GOFORD SEMICONDUCTOR
SKU: 30824364-8
Price: 72.00 EUR
Availability: InStock

Hersteller: GOFORD SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 3.3A; 1.6W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.3A
Case: SOT23
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 4.2nC
Kind of channel: enhancement
Technology: SGT
Power dissipation: 1.6W

auf Bestellung 3000 Stücke:

Lieferzeit 14-21 Tag (e)

Anzahl	Privatkunde
75+	1.14 EUR
104+	0.82 EUR
194+	0.44 EUR
450+	0.19 EUR
749+	0.11 EUR
1000+	0.099 EUR
3000+	0.083 EUR

Mindestbestellmenge: 75 Stücke

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Technische Details GT1K2N10I GOFORD SEMICONDUCTOR

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 3.3A; 1.6W; SOT23, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 3.3A, Case: SOT23, Gate-source voltage: ±20V, Mounting: SMD, Gate charge: 4.2nC, Kind of channel: enhancement, Technology: SGT, Power dissipation: 1.6W.