Produkte > GOFORD SEMICONDUCTOR > GT1K2N10I

GT1K2N10I GOFORD SEMICONDUCTOR

Hersteller: GOFORD SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 3.3A; 1.6W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.3A
Case: SOT23
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 4.2nC
Kind of channel: enhancement
Technology: SGT
Power dissipation: 1.6W

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Technische Details GT1K2N10I GOFORD SEMICONDUCTOR

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 3.3A; 1.6W; SOT23, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 3.3A, Case: SOT23, Gate-source voltage: ±20V, Mounting: SMD, Gate charge: 4.2nC, Kind of channel: enhancement, Technology: SGT, Power dissipation: 1.6W.