GT20J341,S4X(S Toshiba
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
48+ | 3.18 EUR |
56+ | 2.64 EUR |
100+ | 1.79 EUR |
Produktrezensionen
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Technische Details GT20J341,S4X(S Toshiba
Description: DISCRETE IGBT TRANSISTOR TO-220S, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 90 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A, Supplier Device Package: TO-220SIS, Td (on/off) @ 25°C: 60ns/240ns, Switching Energy: 500µJ (on), 400µJ (off), Test Condition: 300V, 20A, 33Ohm, 15V, Part Status: Active, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 45 W.
Weitere Produktangebote GT20J341,S4X(S nach Preis ab 3.25 EUR bis 3.63 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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GT20J341,S4X(S | Hersteller : Toshiba Semiconductor and Storage |
Description: DISCRETE IGBT TRANSISTOR TO-220S Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 90 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A Supplier Device Package: TO-220SIS Td (on/off) @ 25°C: 60ns/240ns Switching Energy: 500µJ (on), 400µJ (off) Test Condition: 300V, 20A, 33Ohm, 15V Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 80 A Power - Max: 45 W |
auf Bestellung 46 Stücke: Lieferzeit 10-14 Tag (e) |
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GT20J341,S4X(S | Hersteller : Toshiba | Trans IGBT Chip N-CH 600V 20A 45W 3-Pin(3+Tab) TO-220SIS Magazine |
Produkt ist nicht verfügbar |
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GT20J341,S4X(S | Hersteller : Toshiba | Trans IGBT Chip N-CH 600V 20A 45000mW 3-Pin(3+Tab) TO-220SIS Magazine |
Produkt ist nicht verfügbar |
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GT20J341,S4X(S | Hersteller : Toshiba | Trans IGBT Chip N-CH 600V 20A 45W 3-Pin(3+Tab) TO-220SIS Magazine |
Produkt ist nicht verfügbar |
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GT20J341,S4X(S | Hersteller : TOSHIBA |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 11A; 45W; TO220FP Type of transistor: IGBT Collector current: 11A Case: TO220FP Mounting: THT Gate-emitter voltage: ±25V Pulsed collector current: 80A Turn-on time: 0.2µs Turn-off time: 370ns Collector-emitter voltage: 600V Power dissipation: 45W Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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GT20J341,S4X(S | Hersteller : Toshiba | IGBTs DISCRETE IGBT TRANSISTOR TO-220SIS MOQ=50 V=1.5 IC=20A |
Produkt ist nicht verfügbar |
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GT20J341,S4X(S | Hersteller : TOSHIBA |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 11A; 45W; TO220FP Type of transistor: IGBT Collector current: 11A Case: TO220FP Mounting: THT Gate-emitter voltage: ±25V Pulsed collector current: 80A Turn-on time: 0.2µs Turn-off time: 370ns Collector-emitter voltage: 600V Power dissipation: 45W Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube |
Produkt ist nicht verfügbar |