GT20J341,S4X(S Toshiba
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 48+ | 3.10 EUR |
| 75+ | 1.92 EUR |
| 100+ | 1.77 EUR |
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Technische Details GT20J341,S4X(S Toshiba
Description: DISCRETE IGBT TRANSISTOR TO-220S, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 90 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A, Supplier Device Package: TO-220SIS, Td (on/off) @ 25°C: 60ns/240ns, Switching Energy: 500µJ (on), 400µJ (off), Test Condition: 300V, 20A, 33Ohm, 15V, Part Status: Active, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 45 W.
Weitere Produktangebote GT20J341,S4X(S nach Preis ab 3.25 EUR bis 3.63 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| GT20J341,S4X(S | Hersteller : Toshiba Semiconductor and Storage |
 Description: DISCRETE IGBT TRANSISTOR TO-220SPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 90 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A Supplier Device Package: TO-220SIS Td (on/off) @ 25°C: 60ns/240ns Switching Energy: 500µJ (on), 400µJ (off) Test Condition: 300V, 20A, 33Ohm, 15V Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 80 A Power - Max: 45 W |
auf Bestellung 46 Stücke: Lieferzeit 10-14 Tag (e) |
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GT20J341,S4X(S | Hersteller : Toshiba |
Trans IGBT Chip N-CH 600V 20A 45W 3-Pin(3+Tab) TO-220SIS Magazine |
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GT20J341,S4X(S | Hersteller : Toshiba |
Trans IGBT Chip N-CH 600V 20A 45000mW 3-Pin(3+Tab) TO-220SIS Magazine |
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GT20J341,S4X(S | Hersteller : Toshiba |
Trans IGBT Chip N-CH 600V 20A 45W 3-Pin(3+Tab) TO-220SIS Magazine |
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GT20J341,S4X(S | Hersteller : TOSHIBA |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 11A; 45W; TO220FP Case: TO220FP Collector-emitter voltage: 600V Gate-emitter voltage: ±25V Collector current: 11A Pulsed collector current: 80A Turn-on time: 0.2µs Turn-off time: 370ns Type of transistor: IGBT Power dissipation: 45W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Mounting: THT Anzahl je Verpackung: 1 Stücke |
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GT20J341,S4X(S | Hersteller : Toshiba |
IGBTs DISCRETE IGBT TRANSISTOR TO-220SIS MOQ=50 V=1.5 IC=20A |
Produkt ist nicht verfügbar |
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GT20J341,S4X(S | Hersteller : TOSHIBA |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 11A; 45W; TO220FP Case: TO220FP Collector-emitter voltage: 600V Gate-emitter voltage: ±25V Collector current: 11A Pulsed collector current: 80A Turn-on time: 0.2µs Turn-off time: 370ns Type of transistor: IGBT Power dissipation: 45W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Mounting: THT |
Produkt ist nicht verfügbar |