GT20J341,S4X(S Toshiba
| Anzahl | Privatkunde |
|---|---|
| 94+ | 1.89 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
94 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details GT20J341,S4X(S Toshiba
Description: IGBT 600V 20A TO-220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 90 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A, Supplier Device Package: TO-220SIS, Td (on/off) @ 25°C: 60ns/240ns, Switching Energy: 500µJ (on), 400µJ (off), Test Condition: 300V, 20A, 33Ohm, 15V, Part Status: Active, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 45 W.
Weitere Produktangebote GT20J341,S4X(S nach Preis ab 1.93 EUR bis 6.33 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GT20J341,S4X(S | Toshiba |
 Trans IGBT Chip N-CH 600V 20A 45W 3-Pin(3+Tab) TO-220SIS Magazine |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||
|
|
GT20J341,S4X(S | Toshiba |
Trans IGBT Chip N-CH 600V 20A 45W 3-Pin(3+Tab) TO-220SIS Magazine |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||
 |
GT20J341,S4X(S | Toshiba Semiconductor and Storage |
Description: IGBT 600V 20A TO-220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 90 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A Supplier Device Package: TO-220SIS Td (on/off) @ 25°C: 60ns/240ns Switching Energy: 500µJ (on), 400µJ (off) Test Condition: 300V, 20A, 33Ohm, 15V Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 80 A Power - Max: 45 W |
auf Bestellung 56 Stücke: Lieferzeit 10-14 Tag (e) |
|
| GT20J341,S4X(S |
|
Hersteller: Toshiba
Trans IGBT Chip N-CH 600V 20A 45W 3-Pin(3+Tab) TO-220SIS Magazine
Trans IGBT Chip N-CH 600V 20A 45W 3-Pin(3+Tab) TO-220SIS Magazine
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 92+ | 1.93 EUR |
| GT20J341,S4X(S |
|
Hersteller: Toshiba
Trans IGBT Chip N-CH 600V 20A 45W 3-Pin(3+Tab) TO-220SIS Magazine
Trans IGBT Chip N-CH 600V 20A 45W 3-Pin(3+Tab) TO-220SIS Magazine
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 32+ | 5.65 EUR |
| 50+ | 4.82 EUR |
| 100+ | 2.68 EUR |
| GT20J341,S4X(S |
|
Hersteller: Toshiba Semiconductor and Storage
Description: IGBT 600V 20A TO-220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-220SIS
Td (on/off) @ 25°C: 60ns/240ns
Switching Energy: 500µJ (on), 400µJ (off)
Test Condition: 300V, 20A, 33Ohm, 15V
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 45 W
Description: IGBT 600V 20A TO-220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-220SIS
Td (on/off) @ 25°C: 60ns/240ns
Switching Energy: 500µJ (on), 400µJ (off)
Test Condition: 300V, 20A, 33Ohm, 15V
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 45 W
auf Bestellung 56 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.33 EUR |
| 50+ | 3.17 EUR |