GT20J341,S4X(S Toshiba
| Anzahl | Preis |
|---|---|
| 32+ | 4.64 EUR |
| 50+ | 3.87 EUR |
| 100+ | 2.12 EUR |
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Technische Details GT20J341,S4X(S Toshiba
Description: IGBT 600V 20A TO-220SIS, Power - Max: 45 W, Current - Collector Pulsed (Icm): 80 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 20 A, Part Status: Active, Test Condition: 300V, 20A, 33Ohm, 15V, Switching Energy: 500µJ (on), 400µJ (off), Td (on/off) @ 25°C: 60ns/240ns, Supplier Device Package: TO-220SIS, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A, Reverse Recovery Time (trr): 90 ns, Input Type: Standard, Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Weitere Produktangebote GT20J341,S4X(S nach Preis ab 2.45 EUR bis 4.89 EUR
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GT20J341,S4X(S | Hersteller : Toshiba Semiconductor and Storage |
 Description: IGBT 600V 20A TO-220SISPower - Max: 45 W Current - Collector Pulsed (Icm): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 20 A Part Status: Active Test Condition: 300V, 20A, 33Ohm, 15V Switching Energy: 500µJ (on), 400µJ (off) Td (on/off) @ 25°C: 60ns/240ns Supplier Device Package: TO-220SIS Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A Reverse Recovery Time (trr): 90 ns Input Type: Standard Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
auf Bestellung 57 Stücke: Lieferzeit 10-14 Tag (e) |
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GT20J341,S4X(S | Hersteller : Toshiba |
Trans IGBT Chip N-CH 600V 20A 45W 3-Pin(3+Tab) TO-220SIS Magazine |
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GT20J341,S4X(S | Hersteller : Toshiba |
Trans IGBT Chip N-CH 600V 20A 45W 3-Pin(3+Tab) TO-220SIS Magazine |
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GT20J341,S4X(S | Hersteller : Toshiba |
IGBTs DISCRETE IGBT TRANSISTOR TO-220SIS MOQ=50 V=1.5 IC=20A |
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GT20J341,S4X(S | Hersteller : TOSHIBA |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 11A; 45W; TO220FP Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Mounting: THT Case: TO220FP Kind of package: tube Turn-on time: 0.2µs Turn-off time: 370ns Collector current: 11A Gate-emitter voltage: ±25V Power dissipation: 45W Pulsed collector current: 80A Collector-emitter voltage: 600V |
Produkt ist nicht verfügbar |