GT20N135SRA,S1E Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: IGBT 1350V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247
Switching Energy: -, 700µJ (off)
Test Condition: 300V, 40A, 39Ohm, 15V
Gate Charge: 185 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 312 W
Description: IGBT 1350V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247
Switching Energy: -, 700µJ (off)
Test Condition: 300V, 40A, 39Ohm, 15V
Gate Charge: 185 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 312 W
auf Bestellung 10 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 7.7 EUR |
10+ | 6.93 EUR |
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Technische Details GT20N135SRA,S1E Toshiba Semiconductor and Storage
Description: IGBT 1350V 40A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A, Supplier Device Package: TO-247, Switching Energy: -, 700µJ (off), Test Condition: 300V, 40A, 39Ohm, 15V, Gate Charge: 185 nC, Part Status: Active, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 1350 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 312 W.
Weitere Produktangebote GT20N135SRA,S1E nach Preis ab 4.08 EUR bis 7.93 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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GT20N135SRA,S1E | Hersteller : Toshiba | IGBT Transistors DISCRET IGBT TRANSTR Vces=1350V Ic=40A |
auf Bestellung 200 Stücke: Lieferzeit 14-28 Tag (e) |
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GT20N135SRA,S1E | Hersteller : Toshiba | Trans IGBT Chip N-CH 1350V 40A 312W 3-Pin(3+Tab) TO-247 T/R |
Produkt ist nicht verfügbar |