GT20N135SRA,S1E Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: IGBT 1350V 40A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247
Switching Energy: -, 700µJ (off)
Test Condition: 300V, 40A, 39Ohm, 15V
Gate Charge: 185 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 312 W
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.7 EUR |
| 10+ | 5.05 EUR |
| 30+ | 4.57 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details GT20N135SRA,S1E Toshiba Semiconductor and Storage
Description: IGBT 1350V 40A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A, Supplier Device Package: TO-247, Switching Energy: -, 700µJ (off), Test Condition: 300V, 40A, 39Ohm, 15V, Gate Charge: 185 nC, Part Status: Active, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 1350 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 312 W.
Weitere Produktangebote GT20N135SRA,S1E nach Preis ab 3.62 EUR bis 6.94 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
GT20N135SRA,S1E | Toshiba |
IGBTs DISCRET IGBT TRANSTR Vces=1350V Ic=40A |
auf Bestellung 57 Stücke: Lieferzeit 10-14 Tag (e) |
|
| GT20N135SRA,S1E |
|
Hersteller: Toshiba
IGBTs DISCRET IGBT TRANSTR Vces=1350V Ic=40A
IGBTs DISCRET IGBT TRANSTR Vces=1350V Ic=40A
auf Bestellung 57 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.94 EUR |
| 10+ | 4.74 EUR |
| 120+ | 3.96 EUR |
| 510+ | 3.86 EUR |
| 1020+ | 3.75 EUR |
| 2520+ | 3.62 EUR |