Technische Details GT250P10M GOFORD Semiconductor
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; SGT; unipolar; -100V; -56A; 173.6W; TO263, Kind of channel: enhancement, Mounting: SMD, Type of transistor: P-MOSFET, Technology: SGT, Polarisation: unipolar, Drain-source voltage: -100V, Drain current: -56A, Gate charge: 73nC, Gate-source voltage: ±20V, Power dissipation: 173.6W, Case: TO263.
Weitere Produktangebote GT250P10M
| Foto | Bezeichnung | Hersteller | Beschreibung |
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|---|---|---|---|---|---|
| GT250P10M | Hersteller : GOFORD SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; SGT; unipolar; -100V; -56A; 173.6W; TO263 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Technology: SGT Polarisation: unipolar Drain-source voltage: -100V Drain current: -56A Gate charge: 73nC Gate-source voltage: ±20V Power dissipation: 173.6W Case: TO263 |
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