GT250P10T Goford Semiconductor
Hersteller: Goford SemiconductorDescription: MOSFET P-CH 100V 56A 173.6W 30m(
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 173.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4059 pF @ 50 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 1.18 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details GT250P10T Goford Semiconductor
Description: MOSFET P-CH 100V 56A 173.6W 30m(, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 56A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V, Power Dissipation (Max): 173.6W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4059 pF @ 50 V.
Weitere Produktangebote GT250P10T nach Preis ab 1.02 EUR bis 3.36 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
|---|---|---|---|---|---|---|---|---|---|
 |
GT250P10T | Hersteller : Goford Semiconductor |
Description: MOSFET P-CH 100V 56A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V Power Dissipation (Max): 173.6W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4059 pF @ 50 V |
auf Bestellung 44 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||
| GT250P10T | Hersteller : GOFORD Semiconductor |
P-Channel Enhancement Mode Power MOSFET |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||
| GT250P10T | Hersteller : GOFORD Semiconductor |
P-Channel Enhancement Mode Power MOSFET |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
|