GT30J121(Q) TOSHIBA
Hersteller: TOSHIBA
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 170W; TO3PN
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 170W
Case: TO3PN
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Kind of package: tube
Turn-on time: 240ns
Turn-off time: 430ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 170W; TO3PN
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 170W
Case: TO3PN
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Kind of package: tube
Turn-on time: 240ns
Turn-off time: 430ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 79 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
16+ | 4.5 EUR |
18+ | 4.06 EUR |
25+ | 2.97 EUR |
26+ | 2.82 EUR |
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Technische Details GT30J121(Q) TOSHIBA
Description: IGBT 600V 30A 170W TO3PN, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 30A, Supplier Device Package: TO-3P(N), Td (on/off) @ 25°C: 90ns/300ns, Switching Energy: 1mJ (on), 800µJ (off), Test Condition: 300V, 30A, 24Ohm, 15V, Part Status: Active, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 170 W.
Weitere Produktangebote GT30J121(Q) nach Preis ab 2.82 EUR bis 8.5 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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GT30J121(Q) | Hersteller : TOSHIBA |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 30A; 170W; TO3PN Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 170W Case: TO3PN Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Kind of package: tube Turn-on time: 240ns Turn-off time: 430ns |
auf Bestellung 79 Stücke: Lieferzeit 14-21 Tag (e) |
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GT30J121(Q) | Hersteller : Toshiba | IGBT Transistors 600V/30A DIS |
auf Bestellung 45 Stücke: Lieferzeit 14-28 Tag (e) |
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GT30J121(Q) | Hersteller : Toshiba Semiconductor and Storage |
Description: IGBT 600V 30A 170W TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 30A Supplier Device Package: TO-3P(N) Td (on/off) @ 25°C: 90ns/300ns Switching Energy: 1mJ (on), 800µJ (off) Test Condition: 300V, 30A, 24Ohm, 15V Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 170 W |
auf Bestellung 101 Stücke: Lieferzeit 21-28 Tag (e) |
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GT30J121(Q) | Hersteller : Toshiba | Trans IGBT Chip N-CH 600V 30A 170000mW 3-Pin(3+Tab) TO-3PN Sack |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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GT30J121(Q) | Hersteller : Toshiba | Trans IGBT Chip N-CH 600V 30A 170W 3-Pin(3+Tab) TO-3PN Sack |
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