Produktrezensionen
Produktbewertung abgeben
Technische Details GT30J121(Q) Toshiba
Description: IGBT 600V 30A 170W TO3PN, Current - Collector Pulsed (Icm): 60 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 30 A, Part Status: Active, Test Condition: 300V, 30A, 24Ohm, 15V, Switching Energy: 1mJ (on), 800µJ (off), Td (on/off) @ 25°C: 90ns/300ns, Supplier Device Package: TO-3P(N), Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 30A, Input Type: Standard, Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Tube, Power - Max: 170 W.
Weitere Produktangebote GT30J121(Q) nach Preis ab 2.55 EUR bis 9.93 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GT30J121(Q) | Toshiba |
 Trans IGBT Chip N-CH 600V 30A 170W 3-Pin(3+Tab) TO-3PN |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
 |
GT30J121(Q) | TOSHIBA |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 30A; 170W; TO3PN Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 170W Case: TO3PN Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Kind of package: tube Turn-off time: 430ns Turn-on time: 240ns |
auf Bestellung 104 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
 |
GT30J121(Q) | Toshiba Semiconductor and Storage |
Description: IGBT 600V 30A 170W TO3PN Current - Collector Pulsed (Icm): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 30 A Part Status: Active Test Condition: 300V, 30A, 24Ohm, 15V Switching Energy: 1mJ (on), 800µJ (off) Td (on/off) @ 25°C: 90ns/300ns Supplier Device Package: TO-3P(N) Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 30A Input Type: Standard Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube Power - Max: 170 W |
auf Bestellung 99 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
GT30J121(Q) | Toshiba |
IGBTs 600V/30A DIS |
auf Bestellung 147 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
|
|
GT30J121(Q) | Toshiba |
Trans IGBT Chip N-CH 600V 30A 170W 3-Pin(3+Tab) TO-3PN |
auf Bestellung 65 Stücke: Lieferzeit 14-21 Tag (e) |
|
| GT30J121(Q) |
|
Hersteller: Toshiba
Trans IGBT Chip N-CH 600V 30A 170W 3-Pin(3+Tab) TO-3PN
Trans IGBT Chip N-CH 600V 30A 170W 3-Pin(3+Tab) TO-3PN
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 3.03 EUR |
| GT30J121(Q) |
|
Hersteller: TOSHIBA
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 170W; TO3PN
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 170W
Case: TO3PN
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Kind of package: tube
Turn-off time: 430ns
Turn-on time: 240ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 170W; TO3PN
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 170W
Case: TO3PN
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Kind of package: tube
Turn-off time: 430ns
Turn-on time: 240ns
auf Bestellung 104 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 16+ | 5.39 EUR |
| 19+ | 4.71 EUR |
| 23+ | 3.77 EUR |
| 27+ | 3.2 EUR |
| GT30J121(Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: IGBT 600V 30A 170W TO3PN
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 30 A
Part Status: Active
Test Condition: 300V, 30A, 24Ohm, 15V
Switching Energy: 1mJ (on), 800µJ (off)
Td (on/off) @ 25°C: 90ns/300ns
Supplier Device Package: TO-3P(N)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 30A
Input Type: Standard
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Power - Max: 170 W
Description: IGBT 600V 30A 170W TO3PN
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 30 A
Part Status: Active
Test Condition: 300V, 30A, 24Ohm, 15V
Switching Energy: 1mJ (on), 800µJ (off)
Td (on/off) @ 25°C: 90ns/300ns
Supplier Device Package: TO-3P(N)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 30A
Input Type: Standard
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Power - Max: 170 W
auf Bestellung 99 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.56 EUR |
| 10+ | 4.99 EUR |
| GT30J121(Q) |
|
Hersteller: Toshiba
IGBTs 600V/30A DIS
IGBTs 600V/30A DIS
auf Bestellung 147 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.33 EUR |
| 10+ | 5.51 EUR |
| 100+ | 3.88 EUR |
| 500+ | 3.19 EUR |
| 1000+ | 3.17 EUR |
| GT30J121(Q) |
|
Hersteller: Toshiba
Trans IGBT Chip N-CH 600V 30A 170W 3-Pin(3+Tab) TO-3PN
Trans IGBT Chip N-CH 600V 30A 170W 3-Pin(3+Tab) TO-3PN
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 11.82 EUR |