.jpg "GT30J65MRB,S1E")
GT30J65MRB,S1E Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: 650V SILICON N-CHANNEL IGBT, TO-
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-3P(N)
Td (on/off) @ 25°C: 75ns/400ns
Switching Energy: 1.4mJ (on), 220µJ (off)
Test Condition: 400V, 15A, 56Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 200 W
Description: 650V SILICON N-CHANNEL IGBT, TO-
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-3P(N)
Td (on/off) @ 25°C: 75ns/400ns
Switching Energy: 1.4mJ (on), 220µJ (off)
Test Condition: 400V, 15A, 56Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 200 W
auf Bestellung 79 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 6.08 EUR |
| 25+ | 4.88 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details GT30J65MRB,S1E Toshiba Semiconductor and Storage
Description: 650V SILICON N-CHANNEL IGBT, TO-, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 200 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A, Supplier Device Package: TO-3P(N), Td (on/off) @ 25°C: 75ns/400ns, Switching Energy: 1.4mJ (on), 220µJ (off), Test Condition: 400V, 15A, 56Ohm, 15V, Gate Charge: 70 nC, Part Status: Active, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 200 W.
Weitere Produktangebote GT30J65MRB,S1E nach Preis ab 2.76 EUR bis 6.08 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
GT30J65MRB,S1E | Hersteller : Toshiba | IGBT Transistors 650V SILICON N-CHANNEL IGBT, TO-3PN, IC=60A |
auf Bestellung 460 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||||
| GT30J65MRB,S1E | Hersteller : Toshiba |
 Trans IGBT Chip N-CH 650V 60A 200W Stick |
Produkt ist nicht verfügbar |