Technische Details GT30J65MRB,S1E Toshiba
Description: IGBT 650V 60A TO-3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 200 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A, Supplier Device Package: TO-3P(N), Td (on/off) @ 25°C: 75ns/400ns, Switching Energy: 1.4mJ (on), 220µJ (off), Test Condition: 400V, 15A, 56Ohm, 15V, Gate Charge: 70 nC, Part Status: Active, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 200 W.
Weitere Produktangebote GT30J65MRB,S1E
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GT30J65MRB,S1E | Hersteller : Toshiba Semiconductor and Storage |
 Description: IGBT 650V 60A TO-3PPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 200 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A Supplier Device Package: TO-3P(N) Td (on/off) @ 25°C: 75ns/400ns Switching Energy: 1.4mJ (on), 220µJ (off) Test Condition: 400V, 15A, 56Ohm, 15V Gate Charge: 70 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 200 W |
Produkt ist nicht verfügbar |
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GT30J65MRB,S1E | Hersteller : Toshiba |
IGBTs 650V SILICON N-CHANNEL IGBT, TO-3PN, IC=60A |
Produkt ist nicht verfügbar |