GT30N135SRA,S1E Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: IGBT 1350V 60A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 60A
Supplier Device Package: TO-247
Switching Energy: -, 1.3mJ (off)
Test Condition: 300V, 60A, 39Ohm, 15V
Gate Charge: 270 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 348 W
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Technische Details GT30N135SRA,S1E Toshiba Semiconductor and Storage
Description: IGBT 1350V 60A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 60A, Supplier Device Package: TO-247, Switching Energy: -, 1.3mJ (off), Test Condition: 300V, 60A, 39Ohm, 15V, Gate Charge: 270 nC, Part Status: Active, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 1350 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 348 W.
Weitere Produktangebote GT30N135SRA,S1E nach Preis ab 4.44 EUR bis 7.91 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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GT30N135SRA,S1E | Toshiba |
IGBTs 1350V DISCRETE IGBT TRANS |
auf Bestellung 3306 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT30N135SRA,S1E |
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Hersteller: Toshiba
IGBTs 1350V DISCRETE IGBT TRANS
IGBTs 1350V DISCRETE IGBT TRANS
auf Bestellung 3306 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.91 EUR |
| 10+ | 4.84 EUR |
| 100+ | 4.44 EUR |