GT400P10T Goford Semiconductor
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 100V 35A TO-220
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 106W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3223 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
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Technische Details GT400P10T Goford Semiconductor
Description: MOSFET P-CH 100V 35A TO-220, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 106W (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 3223 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V.
Weitere Produktangebote GT400P10T nach Preis ab 1.09 EUR bis 3.14 EUR
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GT400P10T | Goford Semiconductor |
Description: MOSFET P-CH 100V 35A TO-220 Input Capacitance (Ciss) (Max) @ Vds: 3223 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 106W (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT400P10T | GOFORD Semiconductor |
GT400P10T |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
|
| GT400P10T |
|
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 100V 35A TO-220
Input Capacitance (Ciss) (Max) @ Vds: 3223 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 106W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET P-CH 100V 35A TO-220
Input Capacitance (Ciss) (Max) @ Vds: 3223 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 106W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.14 EUR |
| 10+ | 2.61 EUR |
| GT400P10T |
|
Hersteller: GOFORD Semiconductor
GT400P10T
GT400P10T
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 1.09 EUR |