GT400P10T Goford Semiconductor
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 100V 35A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3223 pF @ 50 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 0.95 EUR |
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Technische Details GT400P10T Goford Semiconductor
Description: MOSFET P-CH 100V 35A TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 10V, Power Dissipation (Max): 106W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3223 pF @ 50 V.
Weitere Produktangebote GT400P10T nach Preis ab 0.89 EUR bis 2.64 EUR
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GT400P10T |
Hersteller : Goford Semiconductor |
Description: MOSFET P-CH 100V 35A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 10V Power Dissipation (Max): 106W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3223 pF @ 50 V |
auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
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GT400P10T |
Hersteller : GOFORD Semiconductor |
GT400P10T |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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GT400P10T |
Hersteller : GOFORD SEMICONDUCTOR |
Category: THT P channel transistors Description: Transistor: P-MOSFET; SGT; unipolar; -100V; -35A; 106W; TO220 Case: TO220 Technology: SGT Polarisation: unipolar Drain-source voltage: -100V Drain current: -35A Gate charge: 46nC Gate-source voltage: ±20V Power dissipation: 106W Kind of channel: enhancement Mounting: THT Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |