GT40RR21(STA1,E Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: IGBT 1200V 40A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 600 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 40A
Supplier Device Package: TO-3P(N)
Switching Energy: -, 540µJ (off)
Test Condition: 280V, 40A, 10Ohm, 20V
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 230 W
auf Bestellung 21 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 5.83 EUR |
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Technische Details GT40RR21(STA1,E Toshiba Semiconductor and Storage
Description: IGBT 1200V 40A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 600 ns, Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 40A, Supplier Device Package: TO-3P(N), Switching Energy: -, 540µJ (off), Test Condition: 280V, 40A, 10Ohm, 20V, Part Status: Active, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 230 W.
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