GT40RR21(STA1,E Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: IGBT 1200V 40A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 600 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 40A
Supplier Device Package: TO-3P(N)
Switching Energy: -, 540µJ (off)
Test Condition: 280V, 40A, 10Ohm, 20V
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 230 W
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Technische Details GT40RR21(STA1,E Toshiba Semiconductor and Storage
Description: IGBT 1200V 40A TO-3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 600 ns, Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 40A, Supplier Device Package: TO-3P(N), Switching Energy: -, 540µJ (off), Test Condition: 280V, 40A, 10Ohm, 20V, Part Status: Active, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 230 W.
Weitere Produktangebote GT40RR21(STA1,E nach Preis ab 4.44 EUR bis 11.57 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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GT40RR21(STA1,E | Toshiba |
IGBTs Pb-F IGBT / TRANSISTOR TO-3PN Ic=40 Vces=1350 |
auf Bestellung 74 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT40RR21(STA1,E |
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Hersteller: Toshiba
IGBTs Pb-F IGBT / TRANSISTOR TO-3PN Ic=40 Vces=1350
IGBTs Pb-F IGBT / TRANSISTOR TO-3PN Ic=40 Vces=1350
auf Bestellung 74 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 11.57 EUR |
| 10+ | 8.1 EUR |
| 100+ | 5.59 EUR |
| 500+ | 4.66 EUR |
| 1000+ | 4.44 EUR |