auf Bestellung 23 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.87 EUR |
| 10+ | 7.3 EUR |
| 25+ | 4.88 EUR |
| 100+ | 4.05 EUR |
| 500+ | 3.43 EUR |
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Technische Details GT40RR21(STA1,E Toshiba
Description: IGBT 1200V 40A TO-3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 600 ns, Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 40A, Supplier Device Package: TO-3P(N), Switching Energy: -, 540µJ (off), Test Condition: 280V, 40A, 10Ohm, 20V, Part Status: Active, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 230 W.
Weitere Produktangebote GT40RR21(STA1,E nach Preis ab 5.18 EUR bis 8.96 EUR
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GT40RR21(STA1,E | Hersteller : Toshiba Semiconductor and Storage |
 Description: IGBT 1200V 40A TO-3PPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 600 ns Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 40A Supplier Device Package: TO-3P(N) Switching Energy: -, 540µJ (off) Test Condition: 280V, 40A, 10Ohm, 20V Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 200 A Power - Max: 230 W |
auf Bestellung 45 Stücke: Lieferzeit 10-14 Tag (e) |
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GT40RR21(STA1,E | Hersteller : Toshiba |
Trans IGBT Chip N-CH 1350V 40A 230W 3-Pin(3+Tab) TO-3PN Magazine |
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