GT40WR21,Q Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: IGBT 1350V 40A TO3P
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5.9V @ 15V, 40A
Supplier Device Package: TO-3P(N)
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 375 W
Description: IGBT 1350V 40A TO3P
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5.9V @ 15V, 40A
Supplier Device Package: TO-3P(N)
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 375 W
auf Bestellung 42 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 17.56 EUR |
25+ | 17.52 EUR |
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Technische Details GT40WR21,Q Toshiba Semiconductor and Storage
Description: IGBT 1350V 40A TO3P, Packaging: Tray, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 5.9V @ 15V, 40A, Supplier Device Package: TO-3P(N), Part Status: Active, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 1350 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 375 W.
Weitere Produktangebote GT40WR21,Q nach Preis ab 14.79 EUR bis 26.13 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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GT40WR21,Q | Hersteller : Toshiba | IGBT Transistors DISCRETE IGBT TRANSISTOR TO-3PN(OS) V=1800 IC=40A |
auf Bestellung 200 Stücke: Lieferzeit 14-28 Tag (e) |
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GT40WR21,Q | Hersteller : Toshiba | Trans IGBT Chip N-CH 1800V 40A 375W 3-Pin(3+Tab) TO-3PN |
Produkt ist nicht verfügbar |