Technische Details GT50J341,Q Toshiba
Description: PB-F IGBT / TRANSISTOR TO-3PN IC, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A, Supplier Device Package: TO-3P(N), Part Status: Active, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 100 A, Power - Max: 200 W.
Weitere Produktangebote GT50J341,Q
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GT50J341,Q | Hersteller : Toshiba Semiconductor and Storage |
 Description: PB-F IGBT / TRANSISTOR TO-3PN ICPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A Supplier Device Package: TO-3P(N) Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 100 A Power - Max: 200 W |
Produkt ist nicht verfügbar |
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GT50J341,Q | Hersteller : Toshiba |
IGBT Transistors Pb-F IGBT / TRANSISTOR TO-3PN Ic=50A Vces=600V |
Produkt ist nicht verfügbar |