GT50JR21(STA1,E,S) TOSHIBA
Hersteller: TOSHIBACategory: THT IGBT transistors
Description: Transistor: IGBT; 600V; 49A; 230W; TO3PN
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 49A
Power dissipation: 230W
Case: TO3PN
Gate-emitter voltage: ±25V
Pulsed collector current: 100A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 430ns
Turn-off time: 720ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 196 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 13+ | 5.82 EUR |
| 14+ | 5.22 EUR |
| 25+ | 4.62 EUR |
| 100+ | 4.16 EUR |
| 250+ | 3.85 EUR |
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Technische Details GT50JR21(STA1,E,S) TOSHIBA
Category: THT IGBT transistors, Description: Transistor: IGBT; 600V; 49A; 230W; TO3PN, Type of transistor: IGBT, Collector-emitter voltage: 600V, Collector current: 49A, Power dissipation: 230W, Case: TO3PN, Gate-emitter voltage: ±25V, Pulsed collector current: 100A, Mounting: THT, Kind of package: tube, Features of semiconductor devices: integrated anti-parallel diode, Turn-on time: 430ns, Turn-off time: 720ns, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote GT50JR21(STA1,E,S) nach Preis ab 4.16 EUR bis 9.87 EUR
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GT50JR21(STA1,E,S) | Hersteller : TOSHIBA |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 49A; 230W; TO3PN Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 49A Power dissipation: 230W Case: TO3PN Gate-emitter voltage: ±25V Pulsed collector current: 100A Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 430ns Turn-off time: 720ns |
auf Bestellung 196 Stücke: Lieferzeit 14-21 Tag (e) |
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GT50JR21(STA1,E,S) | Hersteller : Toshiba |
IGBTs Pb-F IGBT / TRANSISTOR TO-3PN(OS) Ic=50A V=600 F=60HZ |
auf Bestellung 119 Stücke: Lieferzeit 10-14 Tag (e) |
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GT50JR21(STA1,E,S) | Hersteller : Toshiba Semiconductor and Storage |
Description: IGBT 600V 50A TO-3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Supplier Device Package: TO-3P(N) Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 100 A Power - Max: 230 W |
auf Bestellung 24 Stücke: Lieferzeit 10-14 Tag (e) |
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GT50JR21(STA1,E,S) | Hersteller : Toshiba |
Trans IGBT Chip N-CH 600V 50A 230000mW 3-Pin(3+Tab) TO-3PN Magazine |
Produkt ist nicht verfügbar |
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GT50JR21(STA1,E,S) | Hersteller : Toshiba |
Trans IGBT Chip N-CH 600V 50A 230W 3-Pin(3+Tab) TO-3PN Magazine |
Produkt ist nicht verfügbar |