GT50JR21(STA1,E,S) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: IGBT 600V 50A TO-3P
Power - Max: 230 W
Current - Collector Pulsed (Icm): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
Supplier Device Package: TO-3P(N)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Input Type: Standard
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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Technische Details GT50JR21(STA1,E,S) Toshiba Semiconductor and Storage
Description: IGBT 600V 50A TO-3P, Power - Max: 230 W, Current - Collector Pulsed (Icm): 100 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 50 A, Part Status: Active, Supplier Device Package: TO-3P(N), Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A, Input Type: Standard, Operating Temperature: 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Tube.
Weitere Produktangebote GT50JR21(STA1,E,S) nach Preis ab 4.75 EUR bis 10.82 EUR
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GT50JR21(STA1,E,S) | Hersteller : Toshiba |
IGBTs Pb-F IGBT / TRANSISTOR TO-3PN(OS) Ic=50A V=600 F=60HZ |
auf Bestellung 49 Stücke: Lieferzeit 10-14 Tag (e) |
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GT50JR21(STA1,E,S) | Hersteller : Toshiba |
Trans IGBT Chip N-CH 600V 50A 230W 3-Pin(3+Tab) TO-3PN Magazine |
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