GT50N322A Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: IGBT 1000V 50A TO-3P
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 800 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 60A
Supplier Device Package: TO-3P(N)
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 156 W
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.81 EUR |
| 50+ | 5.15 EUR |
| 100+ | 4.7 EUR |
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Technische Details GT50N322A Toshiba Semiconductor and Storage
Description: IGBT 1000V 50A TO-3P, Packaging: Tray, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 800 ns, Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 60A, Supplier Device Package: TO-3P(N), Part Status: Active, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1000 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 156 W.
Weitere Produktangebote GT50N322A nach Preis ab 4.52 EUR bis 10.91 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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GT50N322A | Toshiba |
IGBTs Pb-F IGBT / TRANSISTOR TO-3PN Ic=50A Vces=600V |
auf Bestellung 44 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT50N322A |
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Hersteller: Toshiba
IGBTs Pb-F IGBT / TRANSISTOR TO-3PN Ic=50A Vces=600V
IGBTs Pb-F IGBT / TRANSISTOR TO-3PN Ic=50A Vces=600V
auf Bestellung 44 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.91 EUR |
| 10+ | 10.28 EUR |
| 50+ | 5.7 EUR |
| 100+ | 5.24 EUR |
| 250+ | 5.15 EUR |
| 500+ | 4.52 EUR |