GT52N10D5 Goford Semiconductor
Hersteller: Goford Semiconductor
Description: N100V,RD(MAX)<7.5M@10V,RD(MAX)<1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 50 V
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.96 EUR |
| 10+ | 2.52 EUR |
| 50+ | 1.9 EUR |
| 100+ | 1.7 EUR |
| 500+ | 1.36 EUR |
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
6 Stücke
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Technische Details GT52N10D5 Goford Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 71A; 100W; DFN5x6-8, Type of transistor: N-MOSFET, Technology: SGT, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 71A, Power dissipation: 100W, Case: DFN5x6-8, Gate-source voltage: ±20V, Mounting: SMD, Gate charge: 50nC, Kind of channel: enhancement.
Weitere Produktangebote GT52N10D5
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| GT52N10D5 | GOFORD |
N-Channel 100 V 71A (Tc) 100W (Tc) Surface Mount 8-DFN Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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GT52N10D5 | Goford Semiconductor |
Description: N100V,RD(MAX)<7.5M@10V,RD(MAX)<1 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 71A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 50 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| GT52N10D5 | GOFORD SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 71A; 100W; DFN5x6-8 Type of transistor: N-MOSFET Technology: SGT Polarisation: unipolar Drain-source voltage: 100V Drain current: 71A Power dissipation: 100W Case: DFN5x6-8 Gate-source voltage: ±20V Mounting: SMD Gate charge: 50nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
GT52N10D5 | GOFORD Semiconductor |
N-CH,100V,71A,RD(max) Less Than 7.5mOhm at 10V,RD(max) Less Than 10mOhm at 4.5V,VTH 1.0V to 2.5V,DFN8L-5x6 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| GT52N10D5 |
|
Hersteller: GOFORD
N-Channel 100 V 71A (Tc) 100W (Tc) Surface Mount 8-DFN Транзистори
N-Channel 100 V 71A (Tc) 100W (Tc) Surface Mount 8-DFN Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GT52N10D5 |
|
Hersteller: Goford Semiconductor
Description: N100V,RD(MAX)<7.5M@10V,RD(MAX)<1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 50 V
Description: N100V,RD(MAX)<7.5M@10V,RD(MAX)<1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| GT52N10D5 |
|
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 71A; 100W; DFN5x6-8
Type of transistor: N-MOSFET
Technology: SGT
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 71A
Power dissipation: 100W
Case: DFN5x6-8
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 50nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 71A; 100W; DFN5x6-8
Type of transistor: N-MOSFET
Technology: SGT
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 71A
Power dissipation: 100W
Case: DFN5x6-8
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 50nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GT52N10D5 |
|
Hersteller: GOFORD Semiconductor
N-CH,100V,71A,RD(max) Less Than 7.5mOhm at 10V,RD(max) Less Than 10mOhm at 4.5V,VTH 1.0V to 2.5V,DFN8L-5x6
N-CH,100V,71A,RD(max) Less Than 7.5mOhm at 10V,RD(max) Less Than 10mOhm at 4.5V,VTH 1.0V to 2.5V,DFN8L-5x6
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH