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GT52N10D5

GT52N10D5 Goford Semiconductor

SOLDING_PROFILE.pdf Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 71A DFN5*6-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V
FET Feature: Standard
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (5.2x5.86)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2626 pF @ 50 V
auf Bestellung 100000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5000+1.11 EUR
15000+ 1.02 EUR
30000+ 0.92 EUR
Mindestbestellmenge: 5000
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Technische Details GT52N10D5 Goford Semiconductor

Description: MOSFET N-CH 100V 71A DFN5*6-8L, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 71A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V, FET Feature: Standard, Power Dissipation (Max): 79W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-DFN (5.2x5.86), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 44.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2626 pF @ 50 V.

Weitere Produktangebote GT52N10D5 nach Preis ab 0.65 EUR bis 3.56 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
GT52N10D5 GT52N10D5 Hersteller : Goford Semiconductor GOFORD-GT52N10D5.pdf Description: N100V,RD(MAX)<7.5M@10V,RD(MAX)<1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V
FET Feature: Standard
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (5.2x5.86)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2626 pF @ 50 V
auf Bestellung 14080 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.56 EUR
10+ 2.97 EUR
100+ 2.37 EUR
500+ 2 EUR
1000+ 1.7 EUR
2000+ 1.61 EUR
Mindestbestellmenge: 8
GT52N10D5 Hersteller : GOFORD Semiconductor GOFORD-GT52N10D5.pdf SOLDING_PROFILE.pdf N-Channel Enhancement Mode Power MOSFET
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
5000+0.73 EUR
15000+ 0.65 EUR
Mindestbestellmenge: 5000
GT52N10D5 GT52N10D5 Hersteller : Goford Semiconductor GOFORD-GT52N10D5.pdf Description: N100V,RD(MAX)<7.5M@10V,RD(MAX)<1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V
FET Feature: Standard
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (5.2x5.86)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2626 pF @ 50 V
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