GT55N06D5 Goford Semiconductor
Hersteller: Goford SemiconductorDescription: N60V,RD(MAX)<8M@10V,RD(MAX)<13M@
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 30 V
auf Bestellung 1056 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.09 EUR |
| 14+ | 1.32 EUR |
| 100+ | 0.87 EUR |
| 500+ | 0.68 EUR |
| 1000+ | 0.62 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details GT55N06D5 Goford Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SGT; unipolar; 60V; 45A; 52W; DFN5x6-8, Type of transistor: N-MOSFET, Technology: SGT, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 45A, Power dissipation: 52W, Case: DFN5x6-8, Gate-source voltage: ±20V, Mounting: SMD, Gate charge: 22nC, Kind of channel: enhancement.
Weitere Produktangebote GT55N06D5 nach Preis ab 0.3 EUR bis 0.38 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GT55N06D5 | Hersteller : GOFORD Semiconductor |
N-CH 60V 53A 8.2Ohm/MAX at 10V, 12Ohm/MAX at 4.5V DFN5x6-8L |
auf Bestellung 70000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||
|
|
GT55N06D5 | Hersteller : Goford Semiconductor |
Description: N60V,RD(MAX)<8M@10V,RD(MAX)<13M@ Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 30 V |
Produkt ist nicht verfügbar |
|||||||||
| GT55N06D5 | Hersteller : GOFORD SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 60V; 45A; 52W; DFN5x6-8 Type of transistor: N-MOSFET Technology: SGT Polarisation: unipolar Drain-source voltage: 60V Drain current: 45A Power dissipation: 52W Case: DFN5x6-8 Gate-source voltage: ±20V Mounting: SMD Gate charge: 22nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |