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GT55N06D5

GT55N06D5 Goford Semiconductor

GT55N06D5.pdf Hersteller: Goford Semiconductor
Description: MOSFET N-CH 60V 45A DFN5*6-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1988 pF @ 30 V
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.43 EUR
15000+0.4 EUR
30000+0.36 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details GT55N06D5 Goford Semiconductor

Description: MOSFET N-CH 60V 45A DFN5*6-8L, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V, Power Dissipation (Max): 69W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: 8-DFN (4.9x5.75), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1988 pF @ 30 V.

Weitere Produktangebote GT55N06D5 nach Preis ab 0.3 EUR bis 1.97 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
GT55N06D5 GT55N06D5 Hersteller : Goford Semiconductor GT55N06D5.pdf Description: N60V,RD(MAX)<8M@10V,RD(MAX)<13M@
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 30 V
auf Bestellung 4515 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+1.97 EUR
15+1.24 EUR
100+0.81 EUR
500+0.63 EUR
1000+0.57 EUR
2000+0.52 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
GT55N06D5 Hersteller : GOFORD Semiconductor GT55N06D5.pdf N-CH 60V 53A 8.2Ohm/MAX at 10V, 12Ohm/MAX at 4.5V DFN5x6-8L
auf Bestellung 70000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.38 EUR
15000+0.34 EUR
30000+0.3 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
GT55N06D5 GT55N06D5 Hersteller : Goford Semiconductor GT55N06D5.pdf Description: N60V,RD(MAX)<8M@10V,RD(MAX)<13M@
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 30 V
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Im Einkaufswagen  Stück im Wert von  UAH