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GT700P08D3

GT700P08D3 Goford Semiconductor

GT700P08D3.pdf
Hersteller: Goford Semiconductor
Description: P-80V,-16A,RD(MAX)<75M@-10V,VTH-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1591 pF @ 40 V
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Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.2 EUR
16+1.38 EUR
100+0.9 EUR
500+0.7 EUR
1000+0.64 EUR
2000+0.58 EUR
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Technische Details GT700P08D3 Goford Semiconductor

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; SGT; unipolar; -80V; -16A; 69W; DFN3x3-8, Case: DFN3x3-8, Mounting: SMD, Power dissipation: 69W, Gate charge: 75nC, Polarisation: unipolar, Technology: SGT, Drain current: -16A, Kind of channel: enhancement, Drain-source voltage: -80V, Type of transistor: P-MOSFET, Gate-source voltage: ±20V.

Weitere Produktangebote GT700P08D3

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
GT700P08D3 GT700P08D3 Goford Semiconductor GT700P08D3.pdf Description: P-80V,-16A,RD(MAX)<75M@-10V,VTH-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1591 pF @ 40 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GT700P08D3 GOFORD SEMICONDUCTOR GT700P08D3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; SGT; unipolar; -80V; -16A; 69W; DFN3x3-8
Case: DFN3x3-8
Mounting: SMD
Power dissipation: 69W
Gate charge: 75nC
Polarisation: unipolar
Technology: SGT
Drain current: -16A
Kind of channel: enhancement
Drain-source voltage: -80V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GT700P08D3 GT700P08D3.pdf
GT700P08D3
Hersteller: Goford Semiconductor
Description: P-80V,-16A,RD(MAX)<75M@-10V,VTH-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1591 pF @ 40 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GT700P08D3 GT700P08D3.pdf
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; SGT; unipolar; -80V; -16A; 69W; DFN3x3-8
Case: DFN3x3-8
Mounting: SMD
Power dissipation: 69W
Gate charge: 75nC
Polarisation: unipolar
Technology: SGT
Drain current: -16A
Kind of channel: enhancement
Drain-source voltage: -80V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH