GT700P08D3 Goford Semiconductor

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Hersteller: Goford Semiconductor
Description: P-80V,-16A,RD(MAX)<75M@-10V,VTH-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1591 pF @ 40 V

auf Bestellung 4965 Stücke:

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Lieferzeit 10-14 Tag (e)

Anzahl	Preis ohne MwSt
16+	1.14 EUR
18+	0.99 EUR
100+	0.68 EUR
500+	0.57 EUR
1000+	0.49 EUR
2000+	0.43 EUR

Mindestbestellmenge: 16

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Technische Details GT700P08D3 Goford Semiconductor

Weitere Produktangebote GT700P08D3

Foto	Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit entfalten einschränken alle	Preis ohne MwSt
	GT700P08D3	Hersteller : Goford Semiconductor	Description: P-80V,-16A,RD(MAX)<75M@-10V,VTH- Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 2A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 8-DFN (3.15x3.05) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1591 pF @ 40 V	Produkt ist nicht verfügbar	kaufen